IS43TR82560B-125KBL-TR

Org	256Mx8
Pkg(Pins)	BGA(78)
Vcc	1.5V
Refresh	8K
Speed	125 = 800MHz
No. of Words	256M
Models	IBIS
Solder	SnAgCu
Status	Prod
Outpack	Tape on Reel
Type	DDR3
Bus Width	8 = x8
Temp.Range	Commercial Grade (0C to +70°C)
CL (CAS Latency)	K = 11
Generation/Rev	B
Product Family	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
Temp. Grade	blank = Commercial Grade (0°C to +70°C)
Solder Type	L = SnAgCu
Number Of Words	2560 = 256M
Generation	B = B
Operating Voltage Range	TR = 1.5V DDR3
Package Type	B = BGA

IS43TR82560B-125KBL-TR Features

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency MAY 2017
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Programmable Additive Latency: 0, CL-1,CL-2
Dynamic ODT (On-Die Termination)
Programmable CAS WRITE latency (CWL) based
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature: Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 256Mx8 128Mx16