IS46DR32160C-3DBLA2

Density	512M
Org	16Mx32
Vcc	1.8V
Type	DDR2
Refresh	8K
Speed	3 = 333MHz
Status	Prod
Comment
Pkg Pins	BGA(126)
Product Family	46 = DDR/DDR2/DDR3/DDR4 Automotive grade
Temp. Grade	A2 = Automotive Grade (-40°C to +105°C)
Solder Type	L = SnAgCu
Number Of Words	160 = 16M
CL (CAS Latency)	D = 5
Generation	C = C
Operating Voltage Range	DR = 1.8V DDR2
Bus Width	32 = x32
Package Type	B = BGA

Datasheet

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IS46DR32160C-3DBLA2 Features

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, and 6 supported
Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and reduced strength options
On-die termination (ODT) OPTIONS
Configuration: 16M x 32 (IS43/46DR32160C - 8K refresh)
Package: x32: 126-ball WBGA
Timing
- Cycle time 2.5ns @CL=6, DDR2-800E 3.0ns @CL=5, DDR2-667D 3.75ns @CL=4, DDR2-533C 5.0ns @CL=3, DDR2-400B

Overview

ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. The 512Mb DDR2 SDRAM is provided in a wide bus x32 format, designed to offer a smaller footprint and support compact designs.

Related Part Number(s)

Description	Stock Qty	Available Qty	Description	Stock Qty	Available Qty
IS46DR32160C-3DBLA2-TR			IS46DR32160C-37CBLA2-TR
IS46DR32160C-37CBLA1			IS46DR32160C-3DBLA1
IS46DR32160C-37CBLA1-TR			IS46DR32160C-3DBLA1-TR
IS46DR32160C-37CBLA2