IS43DR83200A-3DBLI

Density	256M
Org	32Mx8
Pkg(Pins)	BGA(60)
Vcc	1.8V
Refresh	8K
Speed	3 = 333MHz
No. of Words	32M
Solder	SnAgCu
Status	Contact
Type	DDR2
Bus Width	8 = x8
Temp.Range	Industrial Grade (-40C to +85°C)
CL (CAS Latency)	D = 5
Generation/Rev	A
Product Family	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
Temp. Grade	I = Industrial Grade (-40°C to +85°C)
Solder Type	L = SnAgCu
Number Of Words	3200 = 32M
Generation	A = A
Operating Voltage Range	DR = 1.8V DDR2
Package Type	B = BGA

Datasheet

Get Quote

IS43DR83200A-3DBLI Features

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, and 6 supported
Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and reduced strength options
On-die termination (ODT) OPTIONS
Configuration(s): 32Mx8 (8Mx8x4 banks) IS43/46DR83200A 16Mx16 (4Mx16x4 banks) IS43/46DR16160A
Package: x8: 60-ball TW-BGA (8mm x 10.5mm) x16: 84-ball TW-BGA (8mm x 12.5mm) Timing
- Cycle time 2.5ns @CL=6 DDR2-800E 3.0ns @CL=5 DDR2-667D 3.75ns @CL=4 DDR2-533C 5.0ns @CL=3 DDR2-400B

Overview

ISSI's 256Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.