IS43DR16128-3DBL

Org 128Mx16
Pkg(Pins) BGA(84)
Vcc 1.8V
Refresh 8K
Speed up to 333 Mhz
No. of Words 128M
Models IBIS
Solder SnAgCu
Status OBS
Type DDR2
Bus Width 16 = x16
Temp.Range Commercial Grade (0C to +70°C)
CL (CAS Latency) 5
Product Family 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
Number Of Words 1283 = 1283M
Operating Voltage Range DR = 1.8V DDR2

IS43DR16128-3DBL Features

  • Clock frequency up to 333MHz (667 MT/s Data Rate)
  • 8 internal banks for concurrent operation
  • 4-bit prefetch architecture
  • Programmable CAS Latency: 3, 4, 5, 6 and 7
  • Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6
  • Write Latency = Read Latency-1
  • Programmable Burst Sequence: Sequential or Interleave
  • Programmable Burst Length: 4 and 8
  • Automatic and Controlled Precharge Command
  • Power Down Mode
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8 µs (8192 cycles/64 ms)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • ODT (On-Die Termination)
  • Weak Strength Data-Output Driver Option OPTIONS
  • Configuration: − 128Mx16 (two stacked 16M x 8 x8 banks)
  • Package: − 84-ball FBGA Clock Cycle Timing SEPTEMBER 2012
  • Bidirectional differential Data Strobe (Single-ended data-strobe is an optional feature)
  • On-Chip DLL aligns DQ and DQs transitions with CK transitions
  • DQS# can be disabled for single-ended data strobe
  • Differential clock inputs CK and CK#
  • VDD and VDDQ = 1.8V ± 0.1V
  • PASR (Partial Array Self Refresh)
  • SSTL_18 interface
  • tRAS lockout supported

Overview

Input clocks Clock enable Chip Select Command control inputs Address Bank Address I/O Upper Byte Data Strobe Lower Byte Data Strobe Input data mask Supply voltage Ground DQ power supply DQ ground Reference voltage DLL power supply DLL ground On Die Termination Enable No connect.