| Density | 512M |
|---|---|
| Org | 64Mx8 |
| Vcc | 2.5V |
| Type | DDR |
| Refresh | 8K |
| Speed | 5 = 200MHz |
| Status | Prod |
| Comment | |
| Pkg Pins | TSOP2(66), BGA(60) |
| Product Family | 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade |
| Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
| Solder Type | L = SnAgCu |
| Number Of Words | 6400 = 64M |
| Generation | E = E |
| Operating Voltage Range | R = 2.5V DDR or 2.5V SDR |
| Bus Width | 8 = x8 |
| Package Type | B = BGA |
| Outpack | Tape on Reel |
ISSI’s 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK. An Auto Refresh mode is provided, along with a Self Refresh mode. All I/Os are SSTL_2 compatible.
| Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
|---|---|---|---|---|---|
| IS43R86400E-5BLI | 67 | 5,000 | IS43R86400E-5TLI | 2 | 5,000 |
| IS43R86400E | IS43R86400E-5TLI-TR | ||||
| IS43R86400E-4BL | IS43R86400E-6BL | 50,000 | |||
| IS43R86400E-4BL-TR | IS43R86400E-6BL-TR | ||||
| IS43R86400E-4TL | IS43R86400E-6BLI | 3,398 | 5,000 | ||
| IS43R86400E-4TL-TR | IS43R86400E-6BLI-TR | ||||
| IS43R86400E-5BL | 151 | 50,000 | IS43R86400E-6TL | 47 | 50,000 |
| IS43R86400E-5BL-TR | IS43R86400E-6TL-TR | ||||
| IS43R86400E-5TL | 12 | 50,000 | IS43R86400E-6TLI | 28 | 5,000 |
| IS43R86400E-5TL-TR | IS43R86400E-6TLI-TR |