Density | 16M |
---|---|
Org | 1Mx16 |
Vcc | 1.7-1.95V/ 2.7-3.6V |
Status | Prod |
Pkg Pins | TFBGA(48) |
Speed Ns | 70 |
Comment Previous Rev | Asynch/ Page |
Item | 67 = Automotive PSRAM/HyperRAM™ |
ROHS Version | L = true |
Product Type | WVE = Asynch/Page PSRAM |
Temperature Range | A1 = Automotive (-40°C to 85°C) |
Speed | 70 = 70 MHz |
Vdd(V) | BLL = 3V |
Density Configuration | 1M16 = 16Mb /1M x16 |
Package Code | B = 48-ball TFBGA |
The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS67WVE1M16EBLL-70BLA1-TR | IS66WVE1M16ECLL-70BLI-TR | ||||
IS66WVE1M16EALL-70BLI | IS67WVE1M16EALL-70BLA1 | ||||
IS66WVE1M16EALL-70BLI-TR | IS67WVE1M16EALL-70BLA1-TR | ||||
IS66WVE1M16EBLL-55BLI | IS67WVE1M16EBLL-70BLA2 | ||||
IS66WVE1M16EBLL-55BLI-TR | IS67WVE1M16EBLL-70BLA2-TR | ||||
IS66WVE1M16EBLL-70BLI | 10,000 | IS67WVE1M16ECLL-70BLA1 | |||
IS66WVE1M16EBLL-70BLI-TR | 2,500 | IS67WVE1M16ECLL-70BLA1-TR | |||
IS66WVE1M16ECLL-70BLI |