Density | 64M |
---|---|
Org | 4Mx16 |
Vcc | 1.7-1.95V |
Status | Prod |
Pkg Pins | VFBGA(54) |
Speed Ns | 70 |
Comment Previous Rev | CRAM 1.5 |
Speed | 7010 = 104 MHz |
Item | 67 = Automotive PSRAM/HyperRAM™ |
Vdd(V) | ALL = 1.8V |
Density Configuration | 4M16 = 64Mb /4M x16 |
Package Code | B = 54-ball VFBGA |
ROHS Version | L = true |
Product Type | WVC = Cellular RAM 1.5 |
Temperature Range | A1 = Automotive (-40°C to 85°C) |
The IS66WVC4M16EALL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS67WVC4M16EALL-7010BLA1-TR | IS66WVC4M16EALL-7010BLI | 11 | |||
IS66WVC4M16EALL-7008BLI | IS66WVC4M16EALL-7010BLI-TR | 2,500 | |||
IS66WVC4M16EALL-7008BLI-TR |