Density | 64M |
---|---|
Org | 4Mx16 |
Vcc | 1.7-1.95V/ 2.7-3.6V |
Status | Prod |
Pkg Pins | TFBGA(48) |
Speed Ns | 70 |
Comment Previous Rev | Asynch/ Page |
Speed | 70 = 70 MHz |
Item | 66 = Pseudo SRAM/HyperRAM™ |
Vdd(V) | TCLL = 1.7V~1.95V |
Density Configuration | 4M16 = 64Mb /4M x16 |
Package Code | B = 48-ball TFBGA |
ROHS Version | L = true |
Product Type | WVE = Asynch/Page PSRAM |
Temperature Range | I = Industrial (-40°C to 85°C) |
The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS66WVE4M16TCLL-70BLI-TR | IS67WVE4M16TALL-70BLA1-TR | ||||
IS66WVE4M16TALL-70BLI | IS67WVE4M16TBLL-70BLA1 | ||||
IS66WVE4M16TALL-70BLI-TR | IS67WVE4M16TBLL-70BLA1-TR | ||||
IS66WVE4M16TBLL-55BLI | IS67WVE4M16TBLL-70BLA2 | ||||
IS66WVE4M16TBLL-55BLI-TR | IS67WVE4M16TBLL-70BLA2-TR | ||||
IS66WVE4M16TBLL-70BLI | 21,864 | IS67WVE4M16TCLL-70BLA1 | |||
IS66WVE4M16TBLL-70BLI-TR | 5,000 | IS67WVE4M16TCLL-70BLA1-TR | |||
IS67WVE4M16TALL-70BLA1 |