Density | 32M |
---|---|
Org | 2Mx16 |
Vcc | 1.7-1.95V/ 2.7-3.6V |
Status | Prod |
Pkg Pins | TFBGA(48) |
Speed Ns | 70 |
Comment Previous Rev | Asynch/ Page |
Item | 66 = Pseudo SRAM/HyperRAM™ |
ROHS Version | L = true |
Product Type | WVE = Asynch/Page PSRAM |
Temperature Range | I = Industrial (-40°C to 85°C) |
Speed | 70 = 70 MHz |
Vdd(V) | BLL = 3V |
Density Configuration | 2M16 = 32Mb /2M x16 |
Package Code | B = 48-ball TFBGA |
Outpack | Tape on Reel |
The IS66/67WVE2M16EALL/BLL/CLL and IS66/67WVE2M16TALL/BLL/CLL are integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.