1. ISSI
  2. SRAM
  3. Asynchronous SRAM
  4. PowerSaver™ Lower Power
  5. 1.65-3.6V
  6. 4M 512Kx8
  7. sTSOP1(32), TSOP1/2(32), BGA(36)
  8. IS62WV5128EHBLL-TR

  IS62WV5128EHBLL-TR

Datasheet
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Density 4M
Org 512Kx8
Vcc 1.65-3.6V
Status Prod
Pkg Pins sTSOP1(32), TSOP1/2(32), BGA(36)
Speed Ns 45, 55
Comment Previous Rev ECC based SRAM
Datasheet
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IS62WV5128EHBLL-TR Features

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 25 mA (max.)
    • CMOS Standby Current: 3.2 uA (typ., 25°C)
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62/65WV5128EHALL)
    • 2.2V-3.6V VDD (IS62/65WV5128EHBLL)
  • Optional ERR1/ERR2 pin:
    • ERR1: indicates 1-bit error detection and correction
    • ERR2: indicates 2-bit error detection
  • Three state outputs
  • Commercial, Industrial and Automotive temperature support

Overview

SRAM is one of random access memories. SRAM has three different modes supported. Each function is described below with Truth Table. STANDBY MODE Device enters standby mode when deselected (CS# HIGH). The input and output pins (I/O0-7) are placed in a high impedance state. CMOS input in this mode will maximize saving power. WRITE MODE Write operation issues with Chip selected (CS# LOW) and Write Enable (WE#) input LOW. The input and output pins (I/O0-7) are in data input mode. Output buffers are closed during this time even if OE# is LOW.

 

Related Part Number(s)

Description Stock Qty Available Qty
IS62WV5128EHBLL