| Density | 2M |
|---|---|
| Org | 128Kx16 |
| Vcc | 1.65-3.6V |
| Status | Prod |
| Pkg Pins | TSOP2(44), BGA(48) |
| Speed Ns | 45, 55 |
| Comment Previous Rev | |
| Product Family | 62 = Low Power |
| Bit Org | 16 = x16 |
| Operating Voltage | WV = Wide Voltage Range |
| Package Code | B = BGA |
| Voltage Range | ALL = 1.65V to 2.2V |
| Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
| Solder Type | blank = SnPb |
| Number Of Words | 128 = 128K |
| Revision | E = E |
| Speed | 55 = 55NS |
The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access.