IS61WV25616EDBLL-10BLI-TR

Density 4M
Org 256Kx16
Vcc 2.4-3.6V
Status Prod
Pkg Pins TSOP2(44), BGA(48)
Speed Ns 8, 10
Comment Previous Rev ECC Based SRAM

IS61WV25616EDBLL-10BLI-TR Features

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby
  • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available

Overview

The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS61WV25616EDBLL-10BLI 2,400 IS61WV25616EDBLL-8BI
IS61WV25616EDBLL IS61WV25616EDBLL-8BI-TR
IS61WV25616EDBLL-10BI IS61WV25616EDBLL-8BLI 1,440
IS61WV25616EDBLL-10BI-TR IS61WV25616EDBLL-8BLI-TR 5,052
IS61WV25616EDBLL-10TI IS61WV25616EDBLL-8TI
IS61WV25616EDBLL-10TI-TR IS61WV25616EDBLL-8TI-TR
IS61WV25616EDBLL-10TLI 405 IS61WV25616EDBLL-8TLI 135
IS61WV25616EDBLL-10TLI-TR 1,000 IS61WV25616EDBLL-8TLI-TR 1,000