1. ISSI
  2. SRAM
  3. Asynchronous SRAM
  4. High Speed Low Power
  5. 1.65-2.2V
  6. 4M 256Kx16
  7. TSOP2(44), BGA(48)
  8. IS61WV25616EDALL-20BLI-TR

  IS61WV25616EDALL-20BLI-TR

Datasheet
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Density 4M
Org 256Kx16
Vcc 1.65-2.2V
Status Prod
Pkg Pins TSOP2(44), BGA(48)
Speed Ns 20
Comment Previous Rev ECC Based SRAM
Datasheet
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IS61WV25616EDALL-20BLI-TR Features

  • High-speed access time: 20ns
  • Single power supply
    • 1.65V-2.2V VDD
  • Low Standby Current:1.5mA (typical)
  • Fully static operation: no clock or refresh required
  • Data control
  • Three state outputs
  • Lead-free available

Overview

The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS61WV25616EDALL-20BLI 10,000 IS61WV25616EDALL-20BI-TR
IS61WV25616EDALL IS61WV25616EDALL-20TLI
IS61WV25616EDALL-20BI IS61WV25616EDALL-20TLI-TR