IS61WV12816EDBLL-10BI-TR

Density	2M
Org	128Kx16
Vcc	2.4-3.6V
Status	Prod
Pkg Pins	TSOP2(44), BGA(48)
Speed Ns	8, 10
Comment Previous Rev	ECC Based SRAM

Datasheet

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IS61WV12816EDBLL-10BI-TR Features

High-speed access time: 8, 10 ns
Low Active Power: 85 mW (typical)
Low Standby Power: 7 mW (typical) OCTOBER 2011 CMOS standby
Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial and Automotive temperature support
Lead-free available

Overview

The ISSI IS61/64WV12816EDBLL is a high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices.

Description

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Description

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IS61WV12816EDBLL-10BI

IS61WV12816EDBLL-8BI

IS61WV12816EDBLL

IS61WV12816EDBLL-8BI-TR

IS61WV12816EDBLL-10BLI

10,000