IS61WV10248EDBLL-8BLI

Density	8M
Org	1Mx8
Vcc	2.4-3.6V
Status	Prod
Pkg Pins	TSOP2(44), BGA(48)
Speed Ns	8, 10, 20
Comment Previous Rev	ECC Based SRAM

Datasheet

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IS61WV10248EDBLL-8BLI Features

High-speed access times: 8, 10, 20 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for greater noise immunity
Easy memory expansion with CE and OE options
CE power-down
Fully static operation: no clock or refresh required
TTL compatible inputs and outputs
Packages available:
- 48-ball miniBGA (6mm x 8mm)
- 44-pin TSOP (Type II)
Industrial and Automotive Temperature Support

Overview

The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology. This highly reli- able process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

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